Temperature dependence of shunt resistance in photovoltaic devices

S. Banerjee; W. A. Anderson

doi:10.1063/1.97076

Temperature dependence of shunt resistance in photovoltaic devices

S. Banerjee
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×10⁷ Ω cm². Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	1
DOIs	https://doi.org/10.1063/1.97076
State	Published - 1986

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title = "Temperature dependence of shunt resistance in photovoltaic devices",

abstract = "Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×107 Ω cm2. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.",

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AU - Banerjee, S.

AU - Anderson, W. A.

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AB - Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×107 Ω cm2. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.

UR - https://www.scopus.com/pages/publications/0002519215

U2 - 10.1063/1.97076

DO - 10.1063/1.97076

M3 - Article

AN - SCOPUS:0002519215

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VL - 49

SP - 38

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Temperature dependence of shunt resistance in photovoltaic devices

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