Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

A. Pun; S. M. Durbin; J. Kennedy; A. Markwitz; R. Reeves; J. P. Zheng

doi:10.1557/proc-749-w17.10

Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

A. Pun
, S. M. Durbin
, J. Kennedy
, A. Markwitz
, R. Reeves
, J. P. Zheng

Department of Electrical Engineering

Florida State University
University of Canterbury
GNS Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

Post-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.

Original language	English
Pages (from-to)	317-322
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	749
DOIs	https://doi.org/10.1557/proc-749-w17.10
State	Published - 2002
Event	Morphological and Compositional Evolution of Thin Films - Boston, MA, United States Duration: Dec 2 2002 → Dec 5 2002

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@article{4874bdbc75344bcc91912744131d0beb,

title = "Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED",

abstract = "Post-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.",

author = "A. Pun and Durbin, \{S. M.\} and J. Kennedy and A. Markwitz and R. Reeves and Zheng, \{J. P.\}",

year = "2002",

doi = "10.1557/proc-749-w17.10",

language = "English",

volume = "749",

pages = "317--322",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Morphological and Compositional Evolution of Thin Films ; Conference date: 02-12-2002 Through 05-12-2002",

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TY - JOUR

T1 - Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

AU - Pun, A.

AU - Durbin, S. M.

AU - Kennedy, J.

AU - Markwitz, A.

AU - Reeves, R.

AU - Zheng, J. P.

PY - 2002

Y1 - 2002

N2 - Post-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.

AB - Post-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.

UR - https://www.scopus.com/pages/publications/0141649282

U2 - 10.1557/proc-749-w17.10

DO - 10.1557/proc-749-w17.10

M3 - Conference article

AN - SCOPUS:0141649282

SN - 0272-9172

VL - 749

SP - 317

EP - 322

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Morphological and Compositional Evolution of Thin Films

Y2 - 2 December 2002 through 5 December 2002

ER -

Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

Abstract

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