SUBBAND SPECTROSCOPY BY SURFACE CHANNEL TUNNELING.

J. J. Quinn; Galen Kawamoto; B. D. McCombe

doi:10.1016/0039-6028(78)90489-2

SUBBAND SPECTROSCOPY BY SURFACE CHANNEL TUNNELING.

J. J. Quinn
, Galen Kawamoto
, B. D. McCombe

Physics

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p** plus source and the quasi-two-dimensional n-type surface channel can occur. The I - V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

Original language	English
Pages	190-196
Number of pages	7
DOIs	https://doi.org/10.1016/0039-6028(78)90489-2
State	Published - 1978
Event	Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd - Berchtesgaden, Ger Duration: Aug 19 1977 → Aug 22 1977

Conference

Conference	Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd
City	Berchtesgaden, Ger
Period	08/19/77 → 08/22/77

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10.1016/0039-6028(78)90489-2

Cite this

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title = "SUBBAND SPECTROSCOPY BY SURFACE CHANNEL TUNNELING.",

abstract = "Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p** plus source and the quasi-two-dimensional n-type surface channel can occur. The I - V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.",

author = "Quinn, \{J. J.\} and Galen Kawamoto and McCombe, \{B. D.\}",

year = "1978",

doi = "10.1016/0039-6028(78)90489-2",

language = "English",

pages = "190--196",

note = "Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd ; Conference date: 19-08-1977 Through 22-08-1977",

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T1 - SUBBAND SPECTROSCOPY BY SURFACE CHANNEL TUNNELING.

AU - Quinn, J. J.

AU - Kawamoto, Galen

AU - McCombe, B. D.

PY - 1978

Y1 - 1978

N2 - Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p** plus source and the quasi-two-dimensional n-type surface channel can occur. The I - V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

AB - Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p** plus source and the quasi-two-dimensional n-type surface channel can occur. The I - V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

UR - https://www.scopus.com/pages/publications/0018053310

U2 - 10.1016/0039-6028(78)90489-2

DO - 10.1016/0039-6028(78)90489-2

M3 - Paper

AN - SCOPUS:0018053310

SP - 190

EP - 196

T2 - Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd

Y2 - 19 August 1977 through 22 August 1977

ER -

SUBBAND SPECTROSCOPY BY SURFACE CHANNEL TUNNELING.

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