Subband spectroscopy by surface channel tunneling

J. J. Quinn; Galen Kawamoto; B. D. McCombe

doi:10.1016/0039-6028(78)90489-2

Subband spectroscopy by surface channel tunneling

J. J. Quinn
, Galen Kawamoto
, B. D. McCombe

Physics

Brown University

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p⁺ source and the quasi-two-dimensional n-type surface channel can occur. The I-V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

Original language	English
Pages (from-to)	190-196
Number of pages	7
Journal	Surface Science
Volume	73
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(78)90489-2
State	Published - May 1 1978

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title = "Subband spectroscopy by surface channel tunneling",

abstract = "Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p+ source and the quasi-two-dimensional n-type surface channel can occur. The I-V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.",

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AU - Kawamoto, Galen

AU - McCombe, B. D.

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N2 - Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p+ source and the quasi-two-dimensional n-type surface channel can occur. The I-V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

AB - Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p+ source and the quasi-two-dimensional n-type surface channel can occur. The I-V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.

UR - https://www.scopus.com/pages/publications/0004459076

U2 - 10.1016/0039-6028(78)90489-2

DO - 10.1016/0039-6028(78)90489-2

M3 - Article

AN - SCOPUS:0004459076

SN - 0039-6028

VL - 73

SP - 190

EP - 196

JO - Surface Science

JF - Surface Science

IS - C

ER -

Subband spectroscopy by surface channel tunneling

Abstract

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