Sub-nanosecond pulse dynamics of Nd:LSB microchip laser passively Q-switched by Cr:YAG saturable absorber

S. V. Voitikov; A. A. Demidovich; L. E. Batay; A. N. Kuzmin; M. B. Danailov

doi:10.1016/j.optcom.2005.03.005

Sub-nanosecond pulse dynamics of Nd:LSB microchip laser passively Q-switched by Cr:YAG saturable absorber

S. V. Voitikov
, A. A. Demidovich
, L. E. Batay
, A. N. Kuzmin
, M. B. Danailov

Institute for Lasers Photonics and Biophotonics

Belarus Academy of Sciences
Sincrotrone-Trieste

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The pulse dynamics of a Nd³⁺:LSB microchip laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber has been investigated experimentally and theoretically. A generalized model of a passively Q-switched microchip laser has been proposed. This model takes into consideration the thermalization and recombination of the activator atoms in the laser medium, the transverse inhomogeneity of the pump and laser beams and the finite saturable absorber recovery time. Very good agreement between theory and experiment has been obtained for a wide range of pump power with all combinations of output couplers and absorbers. The thermalization times of Nd³⁺ ions in LSB crystal have been estimated for the first time to the best of our knowledge: the thermalization time within the upper laser manifold is ∼0.4 to ∼0.8 ns, while within the lower laser manifold it is ∼0.2 to ∼0.5 ns.

Original language	English
Pages (from-to)	154-164
Number of pages	11
Journal	Optics Communications
Volume	251
Issue number	1-3
DOIs	https://doi.org/10.1016/j.optcom.2005.03.005
State	Published - Jul 1 2005

Keywords

Dynamics modeling
Laser dynamics
Microchip laser
Passive Q-switching

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10.1016/j.optcom.2005.03.005

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title = "Sub-nanosecond pulse dynamics of Nd:LSB microchip laser passively Q-switched by Cr:YAG saturable absorber",

abstract = "The pulse dynamics of a Nd3+:LSB microchip laser passively Q-switched by a Cr4+:YAG saturable absorber has been investigated experimentally and theoretically. A generalized model of a passively Q-switched microchip laser has been proposed. This model takes into consideration the thermalization and recombination of the activator atoms in the laser medium, the transverse inhomogeneity of the pump and laser beams and the finite saturable absorber recovery time. Very good agreement between theory and experiment has been obtained for a wide range of pump power with all combinations of output couplers and absorbers. The thermalization times of Nd3+ ions in LSB crystal have been estimated for the first time to the best of our knowledge: the thermalization time within the upper laser manifold is ∼0.4 to ∼0.8 ns, while within the lower laser manifold it is ∼0.2 to ∼0.5 ns.",

keywords = "Dynamics modeling, Laser dynamics, Microchip laser, Passive Q-switching",

author = "Voitikov, \{S. V.\} and Demidovich, \{A. A.\} and Batay, \{L. E.\} and Kuzmin, \{A. N.\} and Danailov, \{M. B.\}",

year = "2005",

month = jul,

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doi = "10.1016/j.optcom.2005.03.005",

language = "English",

volume = "251",

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journal = "Optics Communications",

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AU - Voitikov, S. V.

AU - Demidovich, A. A.

AU - Batay, L. E.

AU - Kuzmin, A. N.

AU - Danailov, M. B.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - The pulse dynamics of a Nd3+:LSB microchip laser passively Q-switched by a Cr4+:YAG saturable absorber has been investigated experimentally and theoretically. A generalized model of a passively Q-switched microchip laser has been proposed. This model takes into consideration the thermalization and recombination of the activator atoms in the laser medium, the transverse inhomogeneity of the pump and laser beams and the finite saturable absorber recovery time. Very good agreement between theory and experiment has been obtained for a wide range of pump power with all combinations of output couplers and absorbers. The thermalization times of Nd3+ ions in LSB crystal have been estimated for the first time to the best of our knowledge: the thermalization time within the upper laser manifold is ∼0.4 to ∼0.8 ns, while within the lower laser manifold it is ∼0.2 to ∼0.5 ns.

AB - The pulse dynamics of a Nd3+:LSB microchip laser passively Q-switched by a Cr4+:YAG saturable absorber has been investigated experimentally and theoretically. A generalized model of a passively Q-switched microchip laser has been proposed. This model takes into consideration the thermalization and recombination of the activator atoms in the laser medium, the transverse inhomogeneity of the pump and laser beams and the finite saturable absorber recovery time. Very good agreement between theory and experiment has been obtained for a wide range of pump power with all combinations of output couplers and absorbers. The thermalization times of Nd3+ ions in LSB crystal have been estimated for the first time to the best of our knowledge: the thermalization time within the upper laser manifold is ∼0.4 to ∼0.8 ns, while within the lower laser manifold it is ∼0.2 to ∼0.5 ns.

KW - Dynamics modeling

KW - Laser dynamics

KW - Microchip laser

KW - Passive Q-switching

UR - https://www.scopus.com/pages/publications/19844381506

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DO - 10.1016/j.optcom.2005.03.005

M3 - Article

AN - SCOPUS:19844381506

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SP - 154

EP - 164

JO - Optics Communications

JF - Optics Communications

IS - 1-3

ER -

Sub-nanosecond pulse dynamics of Nd:LSB microchip laser passively Q-switched by Cr:YAG saturable absorber

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Keywords

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