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Sub-nanosecond microchip laser with intractivity Raman conversion

  • A. A. Demidovich
  • , P. A. Apanasevich
  • , L. E. Batay
  • , A. S. Grabtchikov
  • , A. N. Kuzmin
  • , V. A. Lisinetskii
  • , V. A. Orlovich
  • , O. V. Kuzmin
  • , V. L. Hait
  • , W. Kiefer
  • , M. B. Danailov
  • Belarus Academy of Sciences
  • STC FIRN
  • University of Würzburg
  • Sincrotrone Trieste

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr4+:YAG saturable absorber, and Ba(NO3)2 Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results.

Original languageEnglish
Pages (from-to)509-514
Number of pages6
JournalApplied Physics B: Lasers and Optics
Volume76
Issue number5
DOIs
StatePublished - May 2003

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