Study of MnAs as a spin injector for GaAs-based semiconductor heterostructures

J. Kwon; R. E. Goacher; E. D. Fraser; L. Schweidenback; A. H. Russ; J. B. Hatch; A. Petrou; J. A. Gardella; H. Luo

doi:10.1007/s10909-012-0674-8

Study of MnAs as a spin injector for GaAs-based semiconductor heterostructures

J. Kwon
, R. E. Goacher
, E. D. Fraser
, L. Schweidenback
, A. H. Russ
, J. B. Hatch
, A. Petrou
, J. A. Gardella
, H. Luo

SUNY Buffalo
Niagara University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report studies of two key factors involved in the use of MnAs as a spin injector, namely, Mn diffusion and spin injection properties when it is grown on GaAs-based semiconductor heterostructures. Depth profile of Mn concentration in a sample consisting of a MnAs film grown on GaAs is investigated with timeof-flight secondary ion mass spectroscopy. The result shows that Mn diffusion into GaAs is negligible, unlike the case of Ga_1-xMn _xAs/GaAs, in which Mn diffusion is significant. Meanwhile, robust spin injection is observed with MnAs as a spin injector for a GaAs-based light emitting diode, persisting up to room temperature.

Original language	English
Pages (from-to)	377-385
Number of pages	9
Journal	Journal of Low Temperature Physics
Volume	169
Issue number	5-6
DOIs	https://doi.org/10.1007/s10909-012-0674-8
State	Published - Dec 2012

Keywords

Diffusion
MnAs
Spin injection
Spin-led
Spintronics
Tof-sims

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10.1007/s10909-012-0674-8

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@article{999e84b9042642208881b4eaaf71d04f,

title = "Study of MnAs as a spin injector for GaAs-based semiconductor heterostructures",

abstract = "We report studies of two key factors involved in the use of MnAs as a spin injector, namely, Mn diffusion and spin injection properties when it is grown on GaAs-based semiconductor heterostructures. Depth profile of Mn concentration in a sample consisting of a MnAs film grown on GaAs is investigated with timeof-flight secondary ion mass spectroscopy. The result shows that Mn diffusion into GaAs is negligible, unlike the case of Ga1-xMn xAs/GaAs, in which Mn diffusion is significant. Meanwhile, robust spin injection is observed with MnAs as a spin injector for a GaAs-based light emitting diode, persisting up to room temperature.",

keywords = "Diffusion, MnAs, Spin injection, Spin-led, Spintronics, Tof-sims",

author = "J. Kwon and Goacher, \{R. E.\} and Fraser, \{E. D.\} and L. Schweidenback and Russ, \{A. H.\} and Hatch, \{J. B.\} and A. Petrou and Gardella, \{J. A.\} and H. Luo",

year = "2012",

month = dec,

doi = "10.1007/s10909-012-0674-8",

language = "English",

volume = "169",

pages = "377--385",

journal = "Journal of Low Temperature Physics",

issn = "0022-2291",

publisher = "Springer New York",

number = "5-6",

}

TY - JOUR

T1 - Study of MnAs as a spin injector for GaAs-based semiconductor heterostructures

AU - Kwon, J.

AU - Goacher, R. E.

AU - Fraser, E. D.

AU - Schweidenback, L.

AU - Russ, A. H.

AU - Hatch, J. B.

AU - Petrou, A.

AU - Gardella, J. A.

AU - Luo, H.

PY - 2012/12

Y1 - 2012/12

N2 - We report studies of two key factors involved in the use of MnAs as a spin injector, namely, Mn diffusion and spin injection properties when it is grown on GaAs-based semiconductor heterostructures. Depth profile of Mn concentration in a sample consisting of a MnAs film grown on GaAs is investigated with timeof-flight secondary ion mass spectroscopy. The result shows that Mn diffusion into GaAs is negligible, unlike the case of Ga1-xMn xAs/GaAs, in which Mn diffusion is significant. Meanwhile, robust spin injection is observed with MnAs as a spin injector for a GaAs-based light emitting diode, persisting up to room temperature.

AB - We report studies of two key factors involved in the use of MnAs as a spin injector, namely, Mn diffusion and spin injection properties when it is grown on GaAs-based semiconductor heterostructures. Depth profile of Mn concentration in a sample consisting of a MnAs film grown on GaAs is investigated with timeof-flight secondary ion mass spectroscopy. The result shows that Mn diffusion into GaAs is negligible, unlike the case of Ga1-xMn xAs/GaAs, in which Mn diffusion is significant. Meanwhile, robust spin injection is observed with MnAs as a spin injector for a GaAs-based light emitting diode, persisting up to room temperature.

KW - Diffusion

KW - MnAs

KW - Spin injection

KW - Spin-led

KW - Spintronics

KW - Tof-sims

UR - https://www.scopus.com/pages/publications/84870558065

U2 - 10.1007/s10909-012-0674-8

DO - 10.1007/s10909-012-0674-8

M3 - Article

AN - SCOPUS:84870558065

SN - 0022-2291

VL - 169

SP - 377

EP - 385

JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

IS - 5-6

ER -

Study of MnAs as a spin injector for GaAs-based semiconductor heterostructures

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Keywords

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