Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

C. L. Kuo; Y. H. Kao; Emil Arnold; J. C. Bilello

doi:10.1063/1.341777

Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

C. L. Kuo
, Y. H. Kao
, Emil Arnold
, J. C. Bilello

Physics

California State University Fullerton
Koninklijke Philips N.V.

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.

Original language	English
Pages (from-to)	1791-1794
Number of pages	4
Journal	Journal of Applied Physics
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.341777
State	Published - 1988

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abstract = "The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.",

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AU - Kuo, C. L.

AU - Kao, Y. H.

AU - Arnold, Emil

AU - Bilello, J. C.

PY - 1988

Y1 - 1988

N2 - The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.

AB - The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.

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DO - 10.1063/1.341777

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

Abstract

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