Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence x-ray scattering

S. Huang; Z. H. Ming; Y. L. Soo; Y. H. Kao; T. Chang; L. P. Fu; G. D. Gilliland; J. Klem; M. Hafich

doi:10.1142/S0217984997001274

Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence x-ray scattering

S. Huang
, Z. H. Ming
, Y. L. Soo
, Y. H. Kao
, T. Chang
, L. P. Fu
, G. D. Gilliland
, J. Klem
, M. Hafich

Physics

SUNY Buffalo
Emory University
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A series of type-II GaAs/AlAs superlattices epitaxially grown with different interrupts have been investigated using the techniques of grazing incidence X-ray scattering and diffraction. The interrupts are specifically designed to alter the interfacial roughness in the superlattices for the present study. Various structural parameters including the layer thickness, interfacial roughness, and intra-layer correlation lengths of fluctuations in the quantum-well widths have been determined. These results are compared with measurements made on the same set of samples using photoluminescence and optical imaging techniques.

Original language	English
Pages (from-to)	1057-1067
Number of pages	11
Journal	Modern Physics Letters B
Volume	11
Issue number	24
DOIs	https://doi.org/10.1142/S0217984997001274
State	Published - Oct 20 1997

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title = "Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence x-ray scattering",

abstract = "A series of type-II GaAs/AlAs superlattices epitaxially grown with different interrupts have been investigated using the techniques of grazing incidence X-ray scattering and diffraction. The interrupts are specifically designed to alter the interfacial roughness in the superlattices for the present study. Various structural parameters including the layer thickness, interfacial roughness, and intra-layer correlation lengths of fluctuations in the quantum-well widths have been determined. These results are compared with measurements made on the same set of samples using photoluminescence and optical imaging techniques.",

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year = "1997",

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doi = "10.1142/S0217984997001274",

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T1 - Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence x-ray scattering

AU - Huang, S.

AU - Ming, Z. H.

AU - Soo, Y. L.

AU - Kao, Y. H.

AU - Chang, T.

AU - Fu, L. P.

AU - Gilliland, G. D.

AU - Klem, J.

AU - Hafich, M.

PY - 1997/10/20

Y1 - 1997/10/20

N2 - A series of type-II GaAs/AlAs superlattices epitaxially grown with different interrupts have been investigated using the techniques of grazing incidence X-ray scattering and diffraction. The interrupts are specifically designed to alter the interfacial roughness in the superlattices for the present study. Various structural parameters including the layer thickness, interfacial roughness, and intra-layer correlation lengths of fluctuations in the quantum-well widths have been determined. These results are compared with measurements made on the same set of samples using photoluminescence and optical imaging techniques.

AB - A series of type-II GaAs/AlAs superlattices epitaxially grown with different interrupts have been investigated using the techniques of grazing incidence X-ray scattering and diffraction. The interrupts are specifically designed to alter the interfacial roughness in the superlattices for the present study. Various structural parameters including the layer thickness, interfacial roughness, and intra-layer correlation lengths of fluctuations in the quantum-well widths have been determined. These results are compared with measurements made on the same set of samples using photoluminescence and optical imaging techniques.

UR - https://www.scopus.com/pages/publications/0003022322

U2 - 10.1142/S0217984997001274

DO - 10.1142/S0217984997001274

M3 - Article

AN - SCOPUS:0003022322

SN - 0217-9849

VL - 11

SP - 1057

EP - 1067

JO - Modern Physics Letters B

JF - Modern Physics Letters B

IS - 24

ER -

Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence x-ray scattering

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