Structure and optical properties of Lu 2SiO 5:Ce phosphor thin films

J. K. Lee; R. E. Muenchausen; Jang Sik Lee; Q. X. Jia; M. Nastasi; J. A. Valdez; B. L. Bennett; D. W. Cooke; Sang Yeol Lee

doi:10.1063/1.2345373

Structure and optical properties of Lu ₂SiO ₅:Ce phosphor thin films

J. K. Lee
, R. E. Muenchausen
, Jang Sik Lee
, Q. X. Jia
, M. Nastasi
, J. A. Valdez
, B. L. Bennett
, D. W. Cooke
, Sang Yeol Lee

Department of Materials Design and Innovation

Los Alamos National Laboratory
Kookmin University
Yonsei University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Luminescent, cerium doped Lu ₂SiO ₅ thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce ³⁺ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600°C. These conditions reflect a balance between Ce ⁴⁺/Ce ³⁺ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.

Original language	English
Article number	101905
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2345373
State	Published - 2006

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title = "Structure and optical properties of Lu 2SiO 5:Ce phosphor thin films",

abstract = "Luminescent, cerium doped Lu 2SiO 5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce 3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600°C. These conditions reflect a balance between Ce 4+/Ce 3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.",

author = "Lee, \{J. K.\} and Muenchausen, \{R. E.\} and Lee, \{Jang Sik\} and Jia, \{Q. X.\} and M. Nastasi and Valdez, \{J. A.\} and Bennett, \{B. L.\} and Cooke, \{D. W.\} and Lee, \{Sang Yeol\}",

year = "2006",

doi = "10.1063/1.2345373",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Structure and optical properties of Lu 2SiO 5:Ce phosphor thin films

AU - Lee, J. K.

AU - Muenchausen, R. E.

AU - Lee, Jang Sik

AU - Jia, Q. X.

AU - Nastasi, M.

AU - Valdez, J. A.

AU - Bennett, B. L.

AU - Cooke, D. W.

AU - Lee, Sang Yeol

PY - 2006

Y1 - 2006

N2 - Luminescent, cerium doped Lu 2SiO 5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce 3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600°C. These conditions reflect a balance between Ce 4+/Ce 3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.

AB - Luminescent, cerium doped Lu 2SiO 5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce 3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600°C. These conditions reflect a balance between Ce 4+/Ce 3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.

UR - https://www.scopus.com/pages/publications/33748498944

U2 - 10.1063/1.2345373

DO - 10.1063/1.2345373

M3 - Article

AN - SCOPUS:33748498944

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101905

ER -

Structure and optical properties of Lu ₂SiO ₅:Ce phosphor thin films

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