Structural properties of SrWO4 films synthesized by pulsed-laser deposition

J. Y. Huang; Q. X. Jia

doi:10.1016/S0040-6090(03)01026-5

Structural properties of SrWO₄ films synthesized by pulsed-laser deposition

J. Y. Huang
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division
Boston College

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Epitaxial SrWO₄ films were successfully deposited with or without a buffer layer on the sapphire substrate by pulsed-laser deposition. The interface structures were characterized by high resolution electron microscopy (HREM), and it indicated that the film deposited on a CeO ₂ buffer layer shows a much better epitaxy than that deposited directly on the substrate, because of the small lattice mismatch between the film and the buffer layer. HREM also revealed definite orientation relationship among the film, the buffer layer, and the substrate, i.e. [1̄10](004̄)_SrWO4//[11̄0](002) _CeO2//[201̄2̄](1̄102̄)_sapphire.

Original language	English
Pages (from-to)	95-98
Number of pages	4
Journal	Thin Solid Films
Volume	444
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)01026-5
State	Published - Nov 1 2003

Keywords

HREM
Pulsed-laser deposition
Strontium tungstate
Thin films

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10.1016/S0040-6090(03)01026-5

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title = "Structural properties of SrWO4 films synthesized by pulsed-laser deposition",

abstract = "Epitaxial SrWO4 films were successfully deposited with or without a buffer layer on the sapphire substrate by pulsed-laser deposition. The interface structures were characterized by high resolution electron microscopy (HREM), and it indicated that the film deposited on a CeO 2 buffer layer shows a much better epitaxy than that deposited directly on the substrate, because of the small lattice mismatch between the film and the buffer layer. HREM also revealed definite orientation relationship among the film, the buffer layer, and the substrate, i.e. [{\=1}10](00{\=4})SrWO4//[1{\=1}0](002) CeO2//[20{\=1}{\=2}]({\=1}10{\=2})sapphire.",

keywords = "HREM, Pulsed-laser deposition, Strontium tungstate, Thin films",

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T1 - Structural properties of SrWO4 films synthesized by pulsed-laser deposition

AU - Huang, J. Y.

AU - Jia, Q. X.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Epitaxial SrWO4 films were successfully deposited with or without a buffer layer on the sapphire substrate by pulsed-laser deposition. The interface structures were characterized by high resolution electron microscopy (HREM), and it indicated that the film deposited on a CeO 2 buffer layer shows a much better epitaxy than that deposited directly on the substrate, because of the small lattice mismatch between the film and the buffer layer. HREM also revealed definite orientation relationship among the film, the buffer layer, and the substrate, i.e. [1̄10](004̄)SrWO4//[11̄0](002) CeO2//[201̄2̄](1̄102̄)sapphire.

AB - Epitaxial SrWO4 films were successfully deposited with or without a buffer layer on the sapphire substrate by pulsed-laser deposition. The interface structures were characterized by high resolution electron microscopy (HREM), and it indicated that the film deposited on a CeO 2 buffer layer shows a much better epitaxy than that deposited directly on the substrate, because of the small lattice mismatch between the film and the buffer layer. HREM also revealed definite orientation relationship among the film, the buffer layer, and the substrate, i.e. [1̄10](004̄)SrWO4//[11̄0](002) CeO2//[201̄2̄](1̄102̄)sapphire.

KW - HREM

KW - Pulsed-laser deposition

KW - Strontium tungstate

KW - Thin films

UR - https://www.scopus.com/pages/publications/0142106812

U2 - 10.1016/S0040-6090(03)01026-5

DO - 10.1016/S0040-6090(03)01026-5

M3 - Article

AN - SCOPUS:0142106812

SN - 0040-6090

VL - 444

SP - 95

EP - 98

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Structural properties of SrWO₄ films synthesized by pulsed-laser deposition

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Keywords

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