Structural characterization of Ba0.5Sr0.5TiO3 on RuO2 prepared by pulsed laser deposition

Q. X. Jia; A. T. Findikoglu; R. Zhou; S. R. Foltyn; X. D. Wu

doi:10.1080/10584589708019989

Structural characterization of Ba_0.5Sr_0.5TiO₃ on RuO₂ prepared by pulsed laser deposition

Q. X. Jia
, A. T. Findikoglu
, R. Zhou
, S. R. Foltyn
, X. D. Wu

Department of Materials Design and Innovation

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Highly conductive RuO₂ thin films were epitaxially grown on (100) LaAlO₃ substrates by pulsed laser deposition. The RuO₂ film deposited with optimized conditions was (h00) oriented normal to the substrate surface with strong in-plane orientation. The RuO₂ thin films deposited at temperatures of above 500 °C demonstrated a room-temperature resistivity of 35 ± 2 μΩ-cm. The Ba_0.5Sr_0.5TiO₃ thin films deposited on epi-RuO₂ showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric loss of 0.03-0.05 at 100 kHz under zero dc bias.

Original language	English
Pages (from-to)	167-172
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	14
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708019989
State	Published - 1997

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title = "Structural characterization of Ba0.5Sr0.5TiO3 on RuO2 prepared by pulsed laser deposition",

abstract = "Highly conductive RuO2 thin films were epitaxially grown on (100) LaAlO3 substrates by pulsed laser deposition. The RuO2 film deposited with optimized conditions was (h00) oriented normal to the substrate surface with strong in-plane orientation. The RuO2 thin films deposited at temperatures of above 500 °C demonstrated a room-temperature resistivity of 35 ± 2 μΩ-cm. The Ba0.5Sr0.5TiO3 thin films deposited on epi-RuO2 showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric loss of 0.03-0.05 at 100 kHz under zero dc bias.",

author = "Jia, \{Q. X.\} and Findikoglu, \{A. T.\} and R. Zhou and Foltyn, \{S. R.\} and Wu, \{X. D.\}",

year = "1997",

doi = "10.1080/10584589708019989",

language = "English",

volume = "14",

pages = "167--172",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

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TY - JOUR

T1 - Structural characterization of Ba0.5Sr0.5TiO3 on RuO2 prepared by pulsed laser deposition

AU - Jia, Q. X.

AU - Findikoglu, A. T.

AU - Zhou, R.

AU - Foltyn, S. R.

AU - Wu, X. D.

PY - 1997

Y1 - 1997

N2 - Highly conductive RuO2 thin films were epitaxially grown on (100) LaAlO3 substrates by pulsed laser deposition. The RuO2 film deposited with optimized conditions was (h00) oriented normal to the substrate surface with strong in-plane orientation. The RuO2 thin films deposited at temperatures of above 500 °C demonstrated a room-temperature resistivity of 35 ± 2 μΩ-cm. The Ba0.5Sr0.5TiO3 thin films deposited on epi-RuO2 showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric loss of 0.03-0.05 at 100 kHz under zero dc bias.

AB - Highly conductive RuO2 thin films were epitaxially grown on (100) LaAlO3 substrates by pulsed laser deposition. The RuO2 film deposited with optimized conditions was (h00) oriented normal to the substrate surface with strong in-plane orientation. The RuO2 thin films deposited at temperatures of above 500 °C demonstrated a room-temperature resistivity of 35 ± 2 μΩ-cm. The Ba0.5Sr0.5TiO3 thin films deposited on epi-RuO2 showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric loss of 0.03-0.05 at 100 kHz under zero dc bias.

UR - https://www.scopus.com/pages/publications/0031331845

U2 - 10.1080/10584589708019989

DO - 10.1080/10584589708019989

M3 - Article

AN - SCOPUS:0031331845

SN - 1058-4587

VL - 14

SP - 167

EP - 172

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Structural characterization of Ba_0.5Sr_0.5TiO₃ on RuO₂ prepared by pulsed laser deposition

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