Skip to main navigation Skip to search Skip to main content

Structural and photoelectrochemical properties of BiVO4 thin films

  • Hongmei Luo
  • , Alex H. Mueller
  • , T. Mark McCleskey
  • , Anthony K. Burrell
  • , Eve Bauer
  • , Q. X. Jia
  • Los Alamos National Laboratory

Research output: Contribution to journalArticlepeer-review

163 Scopus citations

Abstract

Monoclinic scheelite BiVO4 thin films have been successfully prepared by a chemical solution approach of polymer-assisted deposition. The films are transparent yellow with granular morphology and show a strong absorption in the visible light region. The band gap of BiVO4 films is estimated to be 2.54 eV. The photoresponse of the films on conducting oxide electrode substrates is observed, and the photocurrent increases with the higher energy absorption bands.

Original languageEnglish
Pages (from-to)6099-6102
Number of pages4
JournalJournal of Physical Chemistry C
Volume112
Issue number15
DOIs
StatePublished - Apr 17 2008

Fingerprint

Dive into the research topics of 'Structural and photoelectrochemical properties of BiVO4 thin films'. Together they form a unique fingerprint.

Cite this