Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Y. J. Wang; Y. A. Leem; B. D. McCombe; X. G. Wu; F. M. Peeters; E. D. Jones; J. R. Reno; X. Y. Lee; H. W. Jiang

doi:10.1016/S1386-9477(99)00086-7

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Y. J. Wang
, Y. A. Leem
, B. D. McCombe
, X. G. Wu
, F. M. Peeters
, E. D. Jones
, J. R. Reno
, X. Y. Lee
, H. W. Jiang

Physics

National High Magnetic Field Laboratory
Natl. Lab. for Superlattices and M.
University of Antwerp
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al_0.3Ga_0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E_LO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E_LO+(E₂-E₁), where E₂, and E₁ are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm^-1 around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.

Original language	English
Pages (from-to)	195-200
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00086-7
State	Published - Feb 2000
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: Aug 1 1999 → Aug 6 1999

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Wang, Y. J., Leem, Y. A., McCombe, B. D., Wu, X. G., Peeters, F. M., Jones, E. D., Reno, J. R., Lee, X. Y., & Jiang, H. W. (2000). Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields. Physica E: Low-Dimensional Systems and Nanostructures, 6(1), 195-200. https://doi.org/10.1016/S1386-9477(99)00086-7

@article{c11de9c78c694347810d90a255ebe762,

title = "Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields",

abstract = "Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy ELO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to ELO+(E2-E1), where E2, and E1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm-1 around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.",

author = "Wang, \{Y. J.\} and Leem, \{Y. A.\} and McCombe, \{B. D.\} and Wu, \{X. G.\} and Peeters, \{F. M.\} and Jones, \{E. D.\} and Reno, \{J. R.\} and Lee, \{X. Y.\} and Jiang, \{H. W.\}",

year = "2000",

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doi = "10.1016/S1386-9477(99)00086-7",

language = "English",

volume = "6",

pages = "195--200",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1",

note = "13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) ; Conference date: 01-08-1999 Through 06-08-1999",

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TY - JOUR

T1 - Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

AU - Wang, Y. J.

AU - Leem, Y. A.

AU - McCombe, B. D.

AU - Wu, X. G.

AU - Peeters, F. M.

AU - Jones, E. D.

AU - Reno, J. R.

AU - Lee, X. Y.

AU - Jiang, H. W.

PY - 2000/2

Y1 - 2000/2

N2 - Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy ELO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to ELO+(E2-E1), where E2, and E1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm-1 around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.

AB - Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy ELO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to ELO+(E2-E1), where E2, and E1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm-1 around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.

UR - https://www.scopus.com/pages/publications/0034139193

U2 - 10.1016/S1386-9477(99)00086-7

DO - 10.1016/S1386-9477(99)00086-7

M3 - Conference article

AN - SCOPUS:0034139193

SN - 1386-9477

VL - 6

SP - 195

EP - 200

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

Y2 - 1 August 1999 through 6 August 1999

ER -

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

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