Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka; F. Ŕveret; R. W. Martin; P. R. Edwards; A. Vasson; J. Leymarie; I. R. Sellers; J. Y. Duboz; M. Leroux; F. Semond

doi:10.1063/1.2944263

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka
, F. Ŕveret
, R. W. Martin
, P. R. Edwards
, A. Vasson
, J. Leymarie
, I. R. Sellers
, J. Y. Duboz
, M. Leroux
, F. Semond

Department of Electrical Engineering

University of Strathclyde
CRHEA-CNRS
UMR 6602 UBP/CNRS

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

Original language	English
Article number	241105
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2944263
State	Published - 2008

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title = "Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities",

abstract = "Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.",

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doi = "10.1063/1.2944263",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

AU - Bejtka, K.

AU - Ŕveret, F.

AU - Martin, R. W.

AU - Edwards, P. R.

AU - Vasson, A.

AU - Leymarie, J.

AU - Sellers, I. R.

AU - Duboz, J. Y.

AU - Leroux, M.

AU - Semond, F.

PY - 2008

Y1 - 2008

N2 - Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

AB - Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

UR - https://www.scopus.com/pages/publications/45749112549

U2 - 10.1063/1.2944263

DO - 10.1063/1.2944263

M3 - Article

AN - SCOPUS:45749112549

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241105

ER -

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

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