Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature

We present experimental results demonstrating strong light-matter coupling at room temperature in bulk GaN microcavities grown on silicon(111). Simple low finesse planar microcavities show a Rabi energy as high as 60 meV at room temperature. We also demonstrate room temperature strong-coupling from a bulk GaN microcavity with epitaxial distributive Bragg reflectors (DBRs). Furthermore, for this structure at low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode are clearly resolved for the first time in such a microcavity. At room temperature a Rabi energy of 50 meV is observed, and well reproduced using numerical analysis describing the interaction of both the A and B excitonic states with the photonic mode.