Abstract
Co-doping of sol-gel processed SiO2 thin films with Er 3+ ions and In2O3 nanocrystals produced a 100-fold enhancement of Er3+-related 1.54 μm emission compared to films doped only with Er3+. Quantitative studies of temperature-dependent photoluminescence spectra show that this dopant-concentration-dependent luminescence enhancement is a result of energy transfer from In2O3 to Er3+ ions. The dominant nonradiative recombination for Er3+ is energy transfer to hydroxyl groups, which is suppressed by proper thermal treatment. These results demonstrate that In2O3 nanocrystals have high potential for use as a sensitizer of Er3+ ions in high-performance fiber amplifiers.
| Original language | English |
|---|---|
| Article number | 181906 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 18 |
| DOIs | |
| State | Published - Oct 28 2013 |
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