Strain relaxation in epitaxial (Pb,Sr) TiO3 thin films on NdGaO3 substrates

Y. Lin; C. Dai; Y. R. Li; X. Chen; C. L. Chen; A. Bhalla; Q. X. Jia

doi:10.1063/1.3357435

Strain relaxation in epitaxial (Pb,Sr) TiO₃ thin films on NdGaO₃ substrates

Y. Lin
, C. Dai
, Y. R. Li
, X. Chen
, C. L. Chen
, A. Bhalla
, Q. X. Jia

Department of Materials Design and Innovation

University of Electronic Science and Technology of China
Diodes FabTech Inc.
University of Houston
University of Texas at San Antonio

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Strain relaxation behavior of (Pb,Sr) TiO₃ thin films on (110) NdGaO₃ substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed.

Original language	English
Article number	102901
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3357435
State	Published - 2010

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abstract = "Strain relaxation behavior of (Pb,Sr) TiO3 thin films on (110) NdGaO3 substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed.",

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AU - Lin, Y.

AU - Dai, C.

AU - Li, Y. R.

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AU - Chen, C. L.

AU - Bhalla, A.

AU - Jia, Q. X.

PY - 2010

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N2 - Strain relaxation behavior of (Pb,Sr) TiO3 thin films on (110) NdGaO3 substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed.

AB - Strain relaxation behavior of (Pb,Sr) TiO3 thin films on (110) NdGaO3 substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed.

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DO - 10.1063/1.3357435

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JO - Applied Physics Letters

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Strain relaxation in epitaxial (Pb,Sr) TiO₃ thin films on NdGaO₃ substrates

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