Strain mapping in [111] and [001] InGaAs/GaAs superlattices

U. D. Venkateswaran; L. J. Cui; M. Li; B. A. Weinstein; K. Elcess; C. G. Fonstad; C. Mailhiot

doi:10.1063/1.102810

Strain mapping in [111] and [001] InGaAs/GaAs superlattices

U. D. Venkateswaran
, L. J. Cui
, M. Li
, B. A. Weinstein
, K. Elcess
, C. G. Fonstad
, C. Mailhiot

Physics

SUNY Buffalo
Massachusetts Institute of Technology
Xerox

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented In_xGa_1-xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in In_xGa_1-xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.

Original language	English
Pages (from-to)	286-288
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	3
DOIs	https://doi.org/10.1063/1.102810
State	Published - 1990

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title = "Strain mapping in [111] and [001] InGaAs/GaAs superlattices",

abstract = "Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1-xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1-xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.",

author = "Venkateswaran, \{U. D.\} and Cui, \{L. J.\} and M. Li and Weinstein, \{B. A.\} and K. Elcess and Fonstad, \{C. G.\} and C. Mailhiot",

year = "1990",

doi = "10.1063/1.102810",

language = "English",

volume = "56",

pages = "286--288",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Strain mapping in [111] and [001] InGaAs/GaAs superlattices

AU - Venkateswaran, U. D.

AU - Cui, L. J.

AU - Li, M.

AU - Weinstein, B. A.

AU - Elcess, K.

AU - Fonstad, C. G.

AU - Mailhiot, C.

PY - 1990

Y1 - 1990

N2 - Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1-xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1-xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.

AB - Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1-xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1-xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.

UR - https://www.scopus.com/pages/publications/0642268080

U2 - 10.1063/1.102810

DO - 10.1063/1.102810

M3 - Article

AN - SCOPUS:0642268080

SN - 0003-6951

VL - 56

SP - 286

EP - 288

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Strain mapping in [111] and [001] InGaAs/GaAs superlattices

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