Strain effects, electronic parameters, and electronic structures in modulation-doped In _xGa _1-xAs/In _yAl _1-yAs coupled step-rectangular quantum wells

The electronic parameters of two-dimensional electron gas in In _xGa _1-xAs/In _yAl _1-yAs coupled step-rectangular quantum wells were investigated by using the cyclotron resonance measurements. The electronic subband energies, energy wave functions, and Fermi energies were calculated by using a self-consistent method. The electron effective masses of the electron gas in the coupled step and rectangular quantum wells demonstrated the nonparabolicity effects of the conduction band. The values of excited and the ground subband eigenergies and the Fermi energy in the quantum well determined from the bottom of the conduction band of the potential well were found to be 212.6 meV, 347.41 meV and 377.72 meV respectively.