Steep slope transistors: Tunnel FETs and beyond

Alan Seabaugh; Cristobal Alessandri; Mina Asghari Heidarlou; Hua Min Li; Leitao Liu; Hao Lu; Sara Fathipour; Paolo Paletti; Pratyush Pandey; Trond Ytterdal

doi:10.1109/ESSDERC.2016.7599658

Steep slope transistors: Tunnel FETs and beyond

Alan Seabaugh
, Cristobal Alessandri
, Mina Asghari Heidarlou
, Hua Min Li
, Leitao Liu
, Hao Lu
, Sara Fathipour
, Paolo Paletti
, Pratyush Pandey
, Trond Ytterdal

Department of Electrical Engineering

University of Notre Dame
Norwegian University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.

Original language	English
Title of host publication	2016 46th European Solid-State Device Research Conference, ESSDERC 2016
Publisher	Editions Frontieres
Pages	349-351
Number of pages	3
ISBN (Electronic)	9781509029693
DOIs	https://doi.org/10.1109/ESSDERC.2016.7599658
State	Published - Oct 18 2016
Event	46th European Solid-State Device Research Conference, ESSDERC 2016 - Lausanne, Switzerland Duration: Sep 12 2016 → Sep 15 2016

Publication series

Name	European Solid-State Device Research Conference
Volume	2016-October
ISSN (Print)	1930-8876

Conference

Conference	46th European Solid-State Device Research Conference, ESSDERC 2016
Country/Territory	Switzerland
City	Lausanne
Period	09/12/16 → 09/15/16

Keywords

metal-insulator transition FET
NCFET
negative capacitance FET
steep transistor
subthreshold swing
TFET
tunnel field-effect transistor

Access to Document

10.1109/ESSDERC.2016.7599658

Cite this

Seabaugh, A., Alessandri, C., Heidarlou, M. A., Li, H. M., Liu, L., Lu, H., Fathipour, S., Paletti, P., Pandey, P., & Ytterdal, T. (2016). Steep slope transistors: Tunnel FETs and beyond. In 2016 46th European Solid-State Device Research Conference, ESSDERC 2016 (pp. 349-351). Article 7599658 (European Solid-State Device Research Conference; Vol. 2016-October). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2016.7599658

@inproceedings{ec486fcc6f054345918b7225d8655630,

title = "Steep slope transistors: Tunnel FETs and beyond",

abstract = "Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.",

keywords = "metal-insulator transition FET, NCFET, negative capacitance FET, steep transistor, subthreshold swing, TFET, tunnel field-effect transistor",

author = "Alan Seabaugh and Cristobal Alessandri and Heidarlou, \{Mina Asghari\} and Li, \{Hua Min\} and Leitao Liu and Hao Lu and Sara Fathipour and Paolo Paletti and Pratyush Pandey and Trond Ytterdal",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 46th European Solid-State Device Research Conference, ESSDERC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

month = oct,

day = "18",

doi = "10.1109/ESSDERC.2016.7599658",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "Editions Frontieres",

pages = "349--351",

booktitle = "2016 46th European Solid-State Device Research Conference, ESSDERC 2016",

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}

Seabaugh, A, Alessandri, C, Heidarlou, MA, Li, HM, Liu, L, Lu, H, Fathipour, S, Paletti, P, Pandey, P & Ytterdal, T 2016, Steep slope transistors: Tunnel FETs and beyond. in 2016 46th European Solid-State Device Research Conference, ESSDERC 2016., 7599658, European Solid-State Device Research Conference, vol. 2016-October, Editions Frontieres, pp. 349-351, 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, 09/12/16. https://doi.org/10.1109/ESSDERC.2016.7599658

Steep slope transistors: Tunnel FETs and beyond. / Seabaugh, Alan; Alessandri, Cristobal; Heidarlou, Mina Asghari et al.
2016 46th European Solid-State Device Research Conference, ESSDERC 2016. Editions Frontieres, 2016. p. 349-351 7599658 (European Solid-State Device Research Conference; Vol. 2016-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Steep slope transistors

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AU - Seabaugh, Alan

AU - Alessandri, Cristobal

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AU - Li, Hua Min

AU - Liu, Leitao

AU - Lu, Hao

AU - Fathipour, Sara

AU - Paletti, Paolo

AU - Pandey, Pratyush

AU - Ytterdal, Trond

PY - 2016/10/18

Y1 - 2016/10/18

N2 - Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.

AB - Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.

KW - metal-insulator transition FET

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KW - negative capacitance FET

KW - steep transistor

KW - subthreshold swing

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M3 - Conference contribution

AN - SCOPUS:84994448287

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BT - 2016 46th European Solid-State Device Research Conference, ESSDERC 2016

PB - Editions Frontieres

Y2 - 12 September 2016 through 15 September 2016

ER -

Steep slope transistors: Tunnel FETs and beyond

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Keywords

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