Stark effect on confined impurities in semiconductor multi-quantum-well structures

B. S. Yoo; L. He; B. D. McCombe; W. Schaff

doi:10.1016/0749-6036(90)90251-2

Stark effect on confined impurities in semiconductor multi-quantum-well structures

B. S. Yoo
, L. He
, B. D. McCombe
, W. Schaff

Physics

SUNY Buffalo
Cornell University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report the first observation of electric field effects on the electronic states of shallow impurities confined in semiconductor quantum wells. Low temperature, far infrared magnetospectroscopy of the ground state to first excited state transitions of hydrogenic donors in fields up to 9T has been carried out on a p-"i"-n diode with the "i" region consisting of 20 wide (500Å) well-center-doped GaAs quantum wells separated by 200Å Al_0.3Ga_0.7As barriers. The transition energy decreases dramatically with increasing electric field strength; a shift of ∼ 28 cm^-1 in an electric field of 2.3 × 10⁴ V/cm is observed, corresponding to a tunability of 75% of the zero magnetic field transition energy. Results are in good agreement with a variational calculation.

Original language	English
Pages (from-to)	297-300
Number of pages	4
Journal	Superlattices and Microstructures
Volume	8
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(90)90251-2
State	Published - 1990

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@article{7e279742413d40a3a2f91a49c1d7aa33,

title = "Stark effect on confined impurities in semiconductor multi-quantum-well structures",

abstract = "We report the first observation of electric field effects on the electronic states of shallow impurities confined in semiconductor quantum wells. Low temperature, far infrared magnetospectroscopy of the ground state to first excited state transitions of hydrogenic donors in fields up to 9T has been carried out on a p-{"}i{"}-n diode with the {"}i{"} region consisting of 20 wide (500{\AA}) well-center-doped GaAs quantum wells separated by 200{\AA} Al0.3Ga0.7As barriers. The transition energy decreases dramatically with increasing electric field strength; a shift of ∼ 28 cm-1 in an electric field of 2.3 × 104 V/cm is observed, corresponding to a tunability of 75\% of the zero magnetic field transition energy. Results are in good agreement with a variational calculation.",

author = "Yoo, \{B. S.\} and L. He and McCombe, \{B. D.\} and W. Schaff",

year = "1990",

doi = "10.1016/0749-6036(90)90251-2",

language = "English",

volume = "8",

pages = "297--300",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "3",

}

TY - JOUR

T1 - Stark effect on confined impurities in semiconductor multi-quantum-well structures

AU - Yoo, B. S.

AU - He, L.

AU - McCombe, B. D.

AU - Schaff, W.

PY - 1990

Y1 - 1990

N2 - We report the first observation of electric field effects on the electronic states of shallow impurities confined in semiconductor quantum wells. Low temperature, far infrared magnetospectroscopy of the ground state to first excited state transitions of hydrogenic donors in fields up to 9T has been carried out on a p-"i"-n diode with the "i" region consisting of 20 wide (500Å) well-center-doped GaAs quantum wells separated by 200Å Al0.3Ga0.7As barriers. The transition energy decreases dramatically with increasing electric field strength; a shift of ∼ 28 cm-1 in an electric field of 2.3 × 104 V/cm is observed, corresponding to a tunability of 75% of the zero magnetic field transition energy. Results are in good agreement with a variational calculation.

AB - We report the first observation of electric field effects on the electronic states of shallow impurities confined in semiconductor quantum wells. Low temperature, far infrared magnetospectroscopy of the ground state to first excited state transitions of hydrogenic donors in fields up to 9T has been carried out on a p-"i"-n diode with the "i" region consisting of 20 wide (500Å) well-center-doped GaAs quantum wells separated by 200Å Al0.3Ga0.7As barriers. The transition energy decreases dramatically with increasing electric field strength; a shift of ∼ 28 cm-1 in an electric field of 2.3 × 104 V/cm is observed, corresponding to a tunability of 75% of the zero magnetic field transition energy. Results are in good agreement with a variational calculation.

UR - https://www.scopus.com/pages/publications/0040643188

U2 - 10.1016/0749-6036(90)90251-2

DO - 10.1016/0749-6036(90)90251-2

M3 - Article

AN - SCOPUS:0040643188

SN - 0749-6036

VL - 8

SP - 297

EP - 300

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Stark effect on confined impurities in semiconductor multi-quantum-well structures

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