Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

Andrew B. Yankovich; Brian Puchala; Fei Wang; Jung Hun Seo; Dane Morgan; Xudong Wang; Zhenqiang Ma; Alex V. Kvit; Paul M. Voyles

doi:10.1021/nl203848t

Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

Andrew B. Yankovich
, Brian Puchala
, Fei Wang
, Jung Hun Seo
, Dane Morgan
, Xudong Wang
, Zhenqiang Ma
, Alex V. Kvit
, Paul M. Voyles

Department of Materials Design and Innovation

University of Wisconsin-Madison

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.

Original language	English
Pages (from-to)	1311-1316
Number of pages	6
Journal	Nano Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1021/nl203848t
State	Published - Mar 14 2012

Keywords

density function theory
inversion domain boundary
nanowire
Sb doping
scanning transmission electron microscopy
Zinc oxide (p-type)

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10.1021/nl203848t

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@article{4973b14260ef443a8c0cfd18c567be29,

title = "Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires",

abstract = "We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.",

keywords = "density function theory, inversion domain boundary, nanowire, Sb doping, scanning transmission electron microscopy, Zinc oxide (p-type)",

author = "Yankovich, \{Andrew B.\} and Brian Puchala and Fei Wang and Seo, \{Jung Hun\} and Dane Morgan and Xudong Wang and Zhenqiang Ma and Kvit, \{Alex V.\} and Voyles, \{Paul M.\}",

year = "2012",

month = mar,

day = "14",

doi = "10.1021/nl203848t",

language = "English",

volume = "12",

pages = "1311--1316",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

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TY - JOUR

T1 - Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

AU - Yankovich, Andrew B.

AU - Puchala, Brian

AU - Wang, Fei

AU - Seo, Jung Hun

AU - Morgan, Dane

AU - Wang, Xudong

AU - Ma, Zhenqiang

AU - Kvit, Alex V.

AU - Voyles, Paul M.

PY - 2012/3/14

Y1 - 2012/3/14

N2 - We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.

AB - We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.

KW - density function theory

KW - inversion domain boundary

KW - nanowire

KW - Sb doping

KW - scanning transmission electron microscopy

KW - Zinc oxide (p-type)

UR - https://www.scopus.com/pages/publications/84858202950

U2 - 10.1021/nl203848t

DO - 10.1021/nl203848t

M3 - Article

C2 - 22268642

AN - SCOPUS:84858202950

SN - 1530-6984

VL - 12

SP - 1311

EP - 1316

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

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Keywords

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