Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition

Young J. Song; Wayne A. Anderson

doi:10.1557/proc-557-49

Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition

Young J. Song
, Wayne A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Amorphous (a-Si) and microcrystalline silicon (μc-Si) are widely used in photovoltaics and thin film transistors. These products suffer from instability and less than desired electrical properties. We have utilized photon-assisted electron cyclotron resonance chemical vapor deposition (PA-ECRCVD) resulting in great improvement in both areas. For example, PA-ECRCVD compared with conventional ECR-CVD gives carrier lifetime of 1.35 μs compared to 0.17 μs, and photovoltaic solar cell efficiency of 10% compared to 5.9%. Moreover, the PA-ECRCVD cell only degraded to 9.8% compared to the ECR-CVD cell degradation to 5.5%, under long term exposure to tungsten lamp illumination. In addition, PA-ECRCVD gives much enhanced crystallinity in μc-Si as revealed by atomic force microscopy and Raman spectroscopy.

Original language	English
Pages (from-to)	49-54
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	557
DOIs	https://doi.org/10.1557/proc-557-49
State	Published - 1999
Event	The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA Duration: Apr 5 1999 → Apr 9 1999

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@article{b71dccd26ea243f1949781de4b1e0714,

title = "Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition",

abstract = "Amorphous (a-Si) and microcrystalline silicon (μc-Si) are widely used in photovoltaics and thin film transistors. These products suffer from instability and less than desired electrical properties. We have utilized photon-assisted electron cyclotron resonance chemical vapor deposition (PA-ECRCVD) resulting in great improvement in both areas. For example, PA-ECRCVD compared with conventional ECR-CVD gives carrier lifetime of 1.35 μs compared to 0.17 μs, and photovoltaic solar cell efficiency of 10\% compared to 5.9\%. Moreover, the PA-ECRCVD cell only degraded to 9.8\% compared to the ECR-CVD cell degradation to 5.5\%, under long term exposure to tungsten lamp illumination. In addition, PA-ECRCVD gives much enhanced crystallinity in μc-Si as revealed by atomic force microscopy and Raman spectroscopy.",

author = "Song, \{Young J.\} and Anderson, \{Wayne A.\}",

year = "1999",

doi = "10.1557/proc-557-49",

language = "English",

volume = "557",

pages = "49--54",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' ; Conference date: 05-04-1999 Through 09-04-1999",

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TY - JOUR

T1 - Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition

AU - Song, Young J.

AU - Anderson, Wayne A.

PY - 1999

Y1 - 1999

N2 - Amorphous (a-Si) and microcrystalline silicon (μc-Si) are widely used in photovoltaics and thin film transistors. These products suffer from instability and less than desired electrical properties. We have utilized photon-assisted electron cyclotron resonance chemical vapor deposition (PA-ECRCVD) resulting in great improvement in both areas. For example, PA-ECRCVD compared with conventional ECR-CVD gives carrier lifetime of 1.35 μs compared to 0.17 μs, and photovoltaic solar cell efficiency of 10% compared to 5.9%. Moreover, the PA-ECRCVD cell only degraded to 9.8% compared to the ECR-CVD cell degradation to 5.5%, under long term exposure to tungsten lamp illumination. In addition, PA-ECRCVD gives much enhanced crystallinity in μc-Si as revealed by atomic force microscopy and Raman spectroscopy.

AB - Amorphous (a-Si) and microcrystalline silicon (μc-Si) are widely used in photovoltaics and thin film transistors. These products suffer from instability and less than desired electrical properties. We have utilized photon-assisted electron cyclotron resonance chemical vapor deposition (PA-ECRCVD) resulting in great improvement in both areas. For example, PA-ECRCVD compared with conventional ECR-CVD gives carrier lifetime of 1.35 μs compared to 0.17 μs, and photovoltaic solar cell efficiency of 10% compared to 5.9%. Moreover, the PA-ECRCVD cell only degraded to 9.8% compared to the ECR-CVD cell degradation to 5.5%, under long term exposure to tungsten lamp illumination. In addition, PA-ECRCVD gives much enhanced crystallinity in μc-Si as revealed by atomic force microscopy and Raman spectroscopy.

UR - https://www.scopus.com/pages/publications/0033297459

U2 - 10.1557/proc-557-49

DO - 10.1557/proc-557-49

M3 - Conference article

AN - SCOPUS:0033297459

SN - 0272-9172

VL - 557

SP - 49

EP - 54

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices'

Y2 - 5 April 1999 through 9 April 1999

ER -

Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition

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