Stability of Tantalum Nitride Thin Film Resistors

C. L. Au; W. A. Anderson; D. A. Schmitz; J. C. Flassayer; F. M. Collins

doi:10.1557/JMR.1990.1224

Stability of Tantalum Nitride Thin Film Resistors

C. L. Au
, W. A. Anderson
, D. A. Schmitz
, J. C. Flassayer
, F. M. Collins

Department of Electrical Engineering

SUNY Buffalo
Ohmtek, Inc.

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Post-deposition rapid vacuum annealing of tantalum nitride (Ta₂N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about -140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta₂N films having 100–1000 A polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

Original language	English
Pages (from-to)	1224-1232
Number of pages	9
Journal	Journal of Materials Research
Volume	5
Issue number	6
DOIs	https://doi.org/10.1557/JMR.1990.1224
State	Published - Jun 1990

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title = "Stability of Tantalum Nitride Thin Film Resistors",

abstract = "Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about -140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 A polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.",

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year = "1990",

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AU - Au, C. L.

AU - Anderson, W. A.

AU - Schmitz, D. A.

AU - Flassayer, J. C.

AU - Collins, F. M.

PY - 1990/6

Y1 - 1990/6

N2 - Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about -140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 A polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

AB - Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about -140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 A polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

UR - https://www.scopus.com/pages/publications/0025444963

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DO - 10.1557/JMR.1990.1224

M3 - Article

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VL - 5

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EP - 1232

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 6

ER -

Stability of Tantalum Nitride Thin Film Resistors

Abstract

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