Stability of RuO2 thin film resistors

K. L. Jiao; Q. X. Jia; W. A. Anderson

doi:10.1016/0040-6090(93)90187-T

Stability of RuO₂ thin film resistors

K. L. Jiao
, Q. X. Jia
, W. A. Anderson

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

RuO₂ thin film resistors were deposited by reactive sputtering at room temperature on SiO₂/Si or ceramic substrates. The temperature coefficient of resistance (TCR) was adjusted to near zero using a post-deposition annealing process. High stability in TCR was proven under tests of long-term thermal storage, high humidity and power aging. Patterned samples were made from a lift-off process and resistors in a two orders range of resistance exhibited a uniform property. Using current-voltage-temperature (IVT) measurements, different conduction mechanisms were found for samples with positive, near zero and negative TCRs.

Original language	English
Pages (from-to)	59-65
Number of pages	7
Journal	Thin Solid Films
Volume	227
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(93)90187-T
State	Published - May 5 1993

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title = "Stability of RuO2 thin film resistors",

abstract = "RuO2 thin film resistors were deposited by reactive sputtering at room temperature on SiO2/Si or ceramic substrates. The temperature coefficient of resistance (TCR) was adjusted to near zero using a post-deposition annealing process. High stability in TCR was proven under tests of long-term thermal storage, high humidity and power aging. Patterned samples were made from a lift-off process and resistors in a two orders range of resistance exhibited a uniform property. Using current-voltage-temperature (IVT) measurements, different conduction mechanisms were found for samples with positive, near zero and negative TCRs.",

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AU - Jiao, K. L.

AU - Jia, Q. X.

AU - Anderson, W. A.

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AB - RuO2 thin film resistors were deposited by reactive sputtering at room temperature on SiO2/Si or ceramic substrates. The temperature coefficient of resistance (TCR) was adjusted to near zero using a post-deposition annealing process. High stability in TCR was proven under tests of long-term thermal storage, high humidity and power aging. Patterned samples were made from a lift-off process and resistors in a two orders range of resistance exhibited a uniform property. Using current-voltage-temperature (IVT) measurements, different conduction mechanisms were found for samples with positive, near zero and negative TCRs.

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Stability of RuO₂ thin film resistors

Abstract

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