Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1-xMnxTe

D. L. Peterson; A. Petrou; M. Dutta; A. K. Ramdas; S. Rodriguez

doi:10.1016/0038-1098(82)90767-0

Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd_1-xMn_xTe

D. L. Peterson
, A. Petrou
, M. Dutta
, A. K. Ramdas
, S. Rodriguez

Physics

Purdue University

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report spin-flip Raman scattering in Cd_1-xMn_xTe in the paramagnetic phase. The spin-flip Raman line at ω_SFR is observed in a wide range of compositions, x = 0.01 to 0.18. The polarization characteristics establish that the line is associated with the spin-flip transition of an electron. The large effective g-factor, the temperature and magnetic field dependence of ω_SFR can be traced to the especially important exchange interaction between Mn⁺⁺ and band electrons in the diluted magnetic semiconductors.

Original language	English
Pages (from-to)	667-669
Number of pages	3
Journal	Solid State Communications
Volume	43
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(82)90767-0
State	Published - Sep 1982

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title = "Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1-xMnxTe",

abstract = "We report spin-flip Raman scattering in Cd1-xMnxTe in the paramagnetic phase. The spin-flip Raman line at ωSFR is observed in a wide range of compositions, x = 0.01 to 0.18. The polarization characteristics establish that the line is associated with the spin-flip transition of an electron. The large effective g-factor, the temperature and magnetic field dependence of ωSFR can be traced to the especially important exchange interaction between Mn++ and band electrons in the diluted magnetic semiconductors.",

author = "Peterson, \{D. L.\} and A. Petrou and M. Dutta and Ramdas, \{A. K.\} and S. Rodriguez",

year = "1982",

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T1 - Spin-flip Raman scattering in a diluted magnetic semiconductor

T2 - Cd1-xMnxTe

AU - Peterson, D. L.

AU - Petrou, A.

AU - Dutta, M.

AU - Ramdas, A. K.

AU - Rodriguez, S.

PY - 1982/9

Y1 - 1982/9

N2 - We report spin-flip Raman scattering in Cd1-xMnxTe in the paramagnetic phase. The spin-flip Raman line at ωSFR is observed in a wide range of compositions, x = 0.01 to 0.18. The polarization characteristics establish that the line is associated with the spin-flip transition of an electron. The large effective g-factor, the temperature and magnetic field dependence of ωSFR can be traced to the especially important exchange interaction between Mn++ and band electrons in the diluted magnetic semiconductors.

AB - We report spin-flip Raman scattering in Cd1-xMnxTe in the paramagnetic phase. The spin-flip Raman line at ωSFR is observed in a wide range of compositions, x = 0.01 to 0.18. The polarization characteristics establish that the line is associated with the spin-flip transition of an electron. The large effective g-factor, the temperature and magnetic field dependence of ωSFR can be traced to the especially important exchange interaction between Mn++ and band electrons in the diluted magnetic semiconductors.

UR - https://www.scopus.com/pages/publications/0020189070

U2 - 10.1016/0038-1098(82)90767-0

DO - 10.1016/0038-1098(82)90767-0

M3 - Article

AN - SCOPUS:0020189070

SN - 0038-1098

VL - 43

SP - 667

EP - 669

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd_1-xMn_xTe

Abstract

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