Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β -Ga2O3 (2 ¯ 01)

Ye Jia; Ke Zeng; Joshua S. Wallace; Joseph A. Gardella; Uttam Singisetti

doi:10.1063/1.4915262

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO₂ and β -Ga₂O₃ (2 ¯ 01)

SUNY Buffalo

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100 Scopus citations

Abstract

The energy band alignment between atomic layer deposited (ALD) SiO₂ and β-Ga₂O₃ (2 ¯ 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO₂ and Ga₂O₃ is found to be 0.43 eV. The bandgap of ALD SiO₂ was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO₂ and Ga₂O₃. The large conduction band offset makes SiO₂ an attractive gate dielectric for power devices.

Original language	English
Article number	102107
Journal	Applied Physics Letters
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.4915262
State	Published - Mar 9 2015

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10.1063/1.4915262

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title = "Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β -Ga2O3 (2 ¯ 01)",

abstract = "The energy band alignment between atomic layer deposited (ALD) SiO2 and β-Ga2O3 (2 ¯ 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices.",

author = "Ye Jia and Ke Zeng and Wallace, \{Joshua S.\} and Gardella, \{Joseph A.\} and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

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doi = "10.1063/1.4915262",

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T1 - Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β -Ga2O3 (2 ¯ 01)

AU - Jia, Ye

AU - Zeng, Ke

AU - Wallace, Joshua S.

AU - Gardella, Joseph A.

AU - Singisetti, Uttam

PY - 2015/3/9

Y1 - 2015/3/9

N2 - The energy band alignment between atomic layer deposited (ALD) SiO2 and β-Ga2O3 (2 ¯ 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices.

AB - The energy band alignment between atomic layer deposited (ALD) SiO2 and β-Ga2O3 (2 ¯ 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices.

UR - https://www.scopus.com/pages/publications/84924859309

U2 - 10.1063/1.4915262

DO - 10.1063/1.4915262

M3 - Article

AN - SCOPUS:84924859309

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102107

ER -

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO₂ and β -Ga₂O₃ (2 ¯ 01)

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