Specific heat of 4He confined between two silicon wafer+

S. Mehta; F. M. Gasparini

doi:10.1007/BF02569502

Specific heat of ⁴He confined between two silicon wafer⁺

S. Mehta
, F. M. Gasparini

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report new specific heat data for ⁴He confined between two silicon wafers at sub-μm separation. The measurement technique is discussed, as well as the results which are relevant to theories of finite-size scaling. We compare our data to calculations of the scaling function and to earlier experimental results.

Original language	English
Pages (from-to)	173-174
Number of pages	2
Journal	Czechoslovak Journal of Physics
Volume	46
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/BF02569502
State	Published - 1996

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title = "Specific heat of 4He confined between two silicon wafer+",

abstract = "We report new specific heat data for 4He confined between two silicon wafers at sub-μm separation. The measurement technique is discussed, as well as the results which are relevant to theories of finite-size scaling. We compare our data to calculations of the scaling function and to earlier experimental results.",

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AU - Gasparini, F. M.

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AB - We report new specific heat data for 4He confined between two silicon wafers at sub-μm separation. The measurement technique is discussed, as well as the results which are relevant to theories of finite-size scaling. We compare our data to calculations of the scaling function and to earlier experimental results.

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JO - Czechoslovak Journal of Physics

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Specific heat of ⁴He confined between two silicon wafer⁺

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