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Single-crystal silicon nanomembrane transfer techniques and their application toward flexible microwave systems

  • University of Wisconsin-Madison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High-speed transistors using silicon nanomembrane transfer techniques, inductors and capacitors are demonstrated all on plastic substrates. The speed of thin-film transistors (TFTs) made on the plastic substrates have reached RF level with cut-off/maximum oscillation frequency (fT/fmax) values of 2.0/7.8 GHz and both the inductors and the capacitors show resonance frequency (fres) up to 8 GHz. Robust mechanical characteristics were also exhibited by these high-frequency passives components.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages444-445
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: Oct 11 2010Oct 15 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period10/11/1010/15/10

Keywords

  • Capacitor
  • Inductor
  • Membrane transfer
  • Transistor

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