Simulation of electronic transport in single nanobelt tin dioxide gas sensors

P. Andrei; L. L. Fields; J. P. Zheng; Y. Cheng; P. Xiong

doi:10.1109/ISDRS.2009.5378002

Simulation of electronic transport in single nanobelt tin dioxide gas sensors

P. Andrei
, L. L. Fields
, J. P. Zheng
, Y. Cheng
, P. Xiong

Department of Electrical Engineering

Florida State University
Florida State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378002
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

Access to Document

10.1109/ISDRS.2009.5378002

Cite this

@inproceedings{2442c3472e98416f94226af55d1bc1a1,

title = "Simulation of electronic transport in single nanobelt tin dioxide gas sensors",

author = "P. Andrei and Fields, \{L. L.\} and Zheng, \{J. P.\} and Y. Cheng and P. Xiong",

year = "2009",

doi = "10.1109/ISDRS.2009.5378002",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Andrei, P, Fields, LL, Zheng, JP, Cheng, Y & Xiong, P 2009, Simulation of electronic transport in single nanobelt tin dioxide gas sensors. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378002, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378002

Simulation of electronic transport in single nanobelt tin dioxide gas sensors. / Andrei, P.; Fields, L. L.; Zheng, J. P. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378002 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation of electronic transport in single nanobelt tin dioxide gas sensors

AU - Andrei, P.

AU - Fields, L. L.

AU - Zheng, J. P.

AU - Cheng, Y.

AU - Xiong, P.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949399366

U2 - 10.1109/ISDRS.2009.5378002

DO - 10.1109/ISDRS.2009.5378002

M3 - Conference contribution

AN - SCOPUS:77949399366

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Simulation of electronic transport in single nanobelt tin dioxide gas sensors

Publication series

Conference

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