Similarities in the kinetics of photocrystallization and photodarkening in a-Se

Robert E. Tallman; A. Reznik; B. A. Weinstein; S. D. Baranovskii; J. A. Rowlands

doi:10.1063/1.3026173

Similarities in the kinetics of photocrystallization and photodarkening in a-Se

Robert E. Tallman
, A. Reznik
, B. A. Weinstein
, S. D. Baranovskii
, J. A. Rowlands

Physics

SUNY Buffalo
Lakehead University
University of Marburg
980 Oliver Road

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τ_on is compared to the time-constant τ_IPD for irreversible photodarkening (IPD) studied in earlier work. Both τ_on and τ_IPD exhibit activated thermal behavior mediated by an energy barrier E_B ∼0.7-0.95 eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.

Original language	English
Article number	212103
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3026173
State	Published - 2008

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10.1063/1.3026173

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abstract = "The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τon is compared to the time-constant τIPD for irreversible photodarkening (IPD) studied in earlier work. Both τon and τIPD exhibit activated thermal behavior mediated by an energy barrier EB ∼0.7-0.95 eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.",

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AU - Tallman, Robert E.

AU - Reznik, A.

AU - Weinstein, B. A.

AU - Baranovskii, S. D.

AU - Rowlands, J. A.

PY - 2008

Y1 - 2008

N2 - The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τon is compared to the time-constant τIPD for irreversible photodarkening (IPD) studied in earlier work. Both τon and τIPD exhibit activated thermal behavior mediated by an energy barrier EB ∼0.7-0.95 eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.

AB - The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τon is compared to the time-constant τIPD for irreversible photodarkening (IPD) studied in earlier work. Both τon and τIPD exhibit activated thermal behavior mediated by an energy barrier EB ∼0.7-0.95 eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.

UR - https://www.scopus.com/pages/publications/57049126539

U2 - 10.1063/1.3026173

DO - 10.1063/1.3026173

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212103

ER -

Similarities in the kinetics of photocrystallization and photodarkening in a-Se

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