Abstract
We have successfully achieved a uniform sub-pm gap between two flat silicon surfaces. This is done using two 2 diameter, 0.010 thick silicon wafers, one of which has a small central hole used later for experiments with liquid *He. The other wafer has a Si02 pattern made lithographically. The two wafers are bonded together using direct wafer bonding and the uniformity of spacing is found to be better than 1% from IR interference experiments.
| Original language | English |
|---|---|
| Pages (from-to) | 133-134 |
| Number of pages | 2 |
| Journal | Czechoslovak Journal of Physics |
| Volume | 46 |
| Issue number | SUPPL. 1 |
| DOIs | |
| State | Published - 1996 |
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