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Silicon wafers at sub-jim separation for confined 4He experiments

  • S. Mehta
  • , W. Y. Yu
  • , A. Petrou
  • , J. Lipa
  • , D. Bishop
  • , Rm Gasparini
  • SUNY Buffalo
  • Stanford University
  • Nokia

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We have successfully achieved a uniform sub-pm gap between two flat silicon surfaces. This is done using two 2 diameter, 0.010 thick silicon wafers, one of which has a small central hole used later for experiments with liquid *He. The other wafer has a Si02 pattern made lithographically. The two wafers are bonded together using direct wafer bonding and the uniformity of spacing is found to be better than 1% from IR interference experiments.

Original languageEnglish
Pages (from-to)133-134
Number of pages2
JournalCzechoslovak Journal of Physics
Volume46
Issue numberSUPPL. 1
DOIs
StatePublished - 1996

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