Abstract
The electrical properties of self-assembled epitaxial NiSi 2 nanowires (NW) formed on Si substrates were measured. The quantum corrections due to weak antilocalization and electron-electron interactions were also found. The analysis of magnetoresistance indicates that electron phase coherence in the NWs was limited by Nyquist dephasing below 10 K. The phase-breaking and spin-orbit scattering lengths were found to be ∼45 nm and 3-7 nm, at 4.2 K, comparable to those in thin NiSi 2 films. The nanoscale dimensions of the NWs allow the observation of quantum transport at higher temperatures (at least 30 K).
| Original language | English |
|---|---|
| Pages (from-to) | 281-283 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jul 12 2004 |
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