Si wafers uniformly spaced; bonding and diagnostics

Ilsu Rhee; Francis M. Gasparini; Athos Petrou; David J. Bishop

doi:10.1063/1.1141166

Si wafers uniformly spaced; bonding and diagnostics

Ilsu Rhee
, Francis M. Gasparini
, Athos Petrou
, David J. Bishop

Physics

SUNY Buffalo
Nokia

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A new Si-SiO₂ bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry-Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers' spacing. We find that these different techniques yield consistent results.

Original language	English
Pages (from-to)	1528-1536
Number of pages	9
Journal	Review of Scientific Instruments
Volume	61
Issue number	5
DOIs	https://doi.org/10.1063/1.1141166
State	Published - 1990

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10.1063/1.1141166

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title = "Si wafers uniformly spaced; bonding and diagnostics",

abstract = "A new Si-SiO2 bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry-Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers' spacing. We find that these different techniques yield consistent results.",

author = "Ilsu Rhee and Gasparini, \{Francis M.\} and Athos Petrou and Bishop, \{David J.\}",

year = "1990",

doi = "10.1063/1.1141166",

language = "English",

volume = "61",

pages = "1528--1536",

journal = "Review of Scientific Instruments",

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publisher = "American Institute of Physics",

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T1 - Si wafers uniformly spaced; bonding and diagnostics

AU - Rhee, Ilsu

AU - Gasparini, Francis M.

AU - Petrou, Athos

AU - Bishop, David J.

PY - 1990

Y1 - 1990

N2 - A new Si-SiO2 bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry-Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers' spacing. We find that these different techniques yield consistent results.

AB - A new Si-SiO2 bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry-Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers' spacing. We find that these different techniques yield consistent results.

UR - https://www.scopus.com/pages/publications/0000041270

U2 - 10.1063/1.1141166

DO - 10.1063/1.1141166

M3 - Article

AN - SCOPUS:0000041270

SN - 0034-6748

VL - 61

SP - 1528

EP - 1536

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 5

ER -

Si wafers uniformly spaced; bonding and diagnostics

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