TY - GEN
T1 - Si film growth by supercooling of a molten Si alloy film
AU - Wallace, R. L.
AU - Yi, J.
AU - Anderson, W. A.
PY - 1993
Y1 - 1993
N2 - A method is described for the deposition of large-grain polysilicon films at low substrate temperatures. This technique uses precipitation from a thin molten prelayer of Si-Au or Si-Au which is supersaturated with Si from a DC magnetron sputter gun. Typical growth temperatures are 600 °C for the Si-Al layer, and 500 °C for the Si-Au layer. Growth rates of 6 μm/hr have been achieved, though higher rates seem possible. Films of 20 μm thickness and grain size up to several hundred μm have been grown on SiO2 and sheet Mo substrates using Au and Al as the `solvent' metals. The proposed model for film growth was confirmed by cross-section EDS studies of the film/substrate interface. Film crystallinity was confirmed by etching studies, X-ray diffraction, and selected area diffraction. Preferential nucleation has been achieved using a patterned silicide forming metal (Cr,Ni) on RuO2 coated oxidized wafer. A loss mechanism of the solvent metal during growth was observed.
AB - A method is described for the deposition of large-grain polysilicon films at low substrate temperatures. This technique uses precipitation from a thin molten prelayer of Si-Au or Si-Au which is supersaturated with Si from a DC magnetron sputter gun. Typical growth temperatures are 600 °C for the Si-Al layer, and 500 °C for the Si-Au layer. Growth rates of 6 μm/hr have been achieved, though higher rates seem possible. Films of 20 μm thickness and grain size up to several hundred μm have been grown on SiO2 and sheet Mo substrates using Au and Al as the `solvent' metals. The proposed model for film growth was confirmed by cross-section EDS studies of the film/substrate interface. Film crystallinity was confirmed by etching studies, X-ray diffraction, and selected area diffraction. Preferential nucleation has been achieved using a patterned silicide forming metal (Cr,Ni) on RuO2 coated oxidized wafer. A loss mechanism of the solvent metal during growth was observed.
UR - https://www.scopus.com/pages/publications/0027206729
M3 - Conference contribution
AN - SCOPUS:0027206729
SN - 1558991786
T3 - Materials Research Society Symposium Proceedings
SP - 671
EP - 677
BT - Materials Research Society Symposium Proceedings
PB - Publ by Materials Research Society
T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems
Y2 - 30 November 1992 through 4 December 1992
ER -