Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy

S. C. Woronick; E. Canova; Y. H. Kao; M. E. Hills; T. W. Nee; Victor Rehn

doi:10.1063/1.337876

Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy

S. C. Woronick
, E. Canova
, Y. H. Kao
, M. E. Hills
, T. W. Nee
, Victor Rehn

Physics

Stony Brook University
United States Navy

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Extended x-ray absorption fine structure has been measured in an In _0.53Ga_0.47As compound grown by liquid-phase epitaxy. The fluorescence measurement technique was used so as to preserve the integrity of the as-grown sample. Results indicate that the virtual crystal approximation is invalid in this system, and that the structure contains significant disorder in the cation and anion sublattices. The nearest-neighbor environment around each constituent atom, however, appears to be well ordered.

Original language	English
Pages (from-to)	2836-2839
Number of pages	4
Journal	Journal of Applied Physics
Volume	61
Issue number	8
DOIs	https://doi.org/10.1063/1.337876
State	Published - 1987

Access to Document

10.1063/1.337876

Cite this

@article{7ce6e910b7f94da996d280c707b4d327,

title = "Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy",

abstract = "Extended x-ray absorption fine structure has been measured in an In 0.53Ga0.47As compound grown by liquid-phase epitaxy. The fluorescence measurement technique was used so as to preserve the integrity of the as-grown sample. Results indicate that the virtual crystal approximation is invalid in this system, and that the structure contains significant disorder in the cation and anion sublattices. The nearest-neighbor environment around each constituent atom, however, appears to be well ordered.",

author = "Woronick, \{S. C.\} and E. Canova and Kao, \{Y. H.\} and Hills, \{M. E.\} and Nee, \{T. W.\} and Victor Rehn",

year = "1987",

doi = "10.1063/1.337876",

language = "English",

volume = "61",

pages = "2836--2839",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy

AU - Woronick, S. C.

AU - Canova, E.

AU - Kao, Y. H.

AU - Hills, M. E.

AU - Nee, T. W.

AU - Rehn, Victor

PY - 1987

Y1 - 1987

N2 - Extended x-ray absorption fine structure has been measured in an In 0.53Ga0.47As compound grown by liquid-phase epitaxy. The fluorescence measurement technique was used so as to preserve the integrity of the as-grown sample. Results indicate that the virtual crystal approximation is invalid in this system, and that the structure contains significant disorder in the cation and anion sublattices. The nearest-neighbor environment around each constituent atom, however, appears to be well ordered.

AB - Extended x-ray absorption fine structure has been measured in an In 0.53Ga0.47As compound grown by liquid-phase epitaxy. The fluorescence measurement technique was used so as to preserve the integrity of the as-grown sample. Results indicate that the virtual crystal approximation is invalid in this system, and that the structure contains significant disorder in the cation and anion sublattices. The nearest-neighbor environment around each constituent atom, however, appears to be well ordered.

UR - https://www.scopus.com/pages/publications/0642324918

U2 - 10.1063/1.337876

DO - 10.1063/1.337876

M3 - Article

AN - SCOPUS:0642324918

SN - 0021-8979

VL - 61

SP - 2836

EP - 2839

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this