Abstract
We present a theory for the shape, size, and nonuniform composition profile of a small prepyramid island in an alloy epitaxial film when surface diffusion is much faster than deposition and bulk diffusion. The predicted composition profile has segregation of the larger misfit component to the island peak, with segregation enhanced by misfit strain and solute strain but retarded by alloy solution thermodynamics. Vertical composition gradients through the center of the island due to this mechanism are on the order of 2%/nm for GeXSi1-X/Si and 10-15%/nm for InXGa1-XAs/GaAs.
| Original language | English |
|---|---|
| Article number | 206101 |
| Journal | Physical Review Letters |
| Volume | 95 |
| Issue number | 20 |
| DOIs | |
| State | Published - Nov 11 2005 |
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