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Semiconductor superlattices studied by grazing x-ray scattering and diffraction

  • Z. H. Ming
  • , Y. L. Soo
  • , S. Huang
  • , Y. H. Kao
  • , K. Stair
  • , G. Devane
  • , C. Choi-Feng
  • , T. Chang
  • , L. P. Fu
  • , G. D. Gilliland
  • , J. Klem
  • , M. Hafich
  • SUNY Buffalo

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

Original languageEnglish
Pages (from-to)325-330
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume417
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

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