Semi-insulating polysilicon: Growth, processing and structural characterization

R. V. Prasad; F. A. Selim; D. D.L. Chung

doi:10.1016/0167-577X(86)90052-2

Semi-insulating polysilicon: Growth, processing and structural characterization

R. V. Prasad
, F. A. Selim
, D. D.L. Chung

Department of Mechanical and Aerospace Engineering

Carnegie Mellon University
General Electric

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

X-ray diffraction of semi-insulating polysilicon (SIPOS) on Si, oxidized Si and Al₂O₃ substrates showed the presence of an anomalous form of crystalline Si and the absence of crystalline SiO₂. SIPOS on Si and oxidized Si substrates contained an additional phase which grew with oxygen concentration, whereas SIPOS on Al₂O₃ contained no such phase.

Original language	English
Pages (from-to)	71-76
Number of pages	6
Journal	Materials Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1016/0167-577X(86)90052-2
State	Published - Feb 1986

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@article{c054a0fc2a6e428ea55cca0bb422d786,

title = "Semi-insulating polysilicon: Growth, processing and structural characterization",

abstract = "X-ray diffraction of semi-insulating polysilicon (SIPOS) on Si, oxidized Si and Al2O3 substrates showed the presence of an anomalous form of crystalline Si and the absence of crystalline SiO2. SIPOS on Si and oxidized Si substrates contained an additional phase which grew with oxygen concentration, whereas SIPOS on Al2O3 contained no such phase.",

author = "Prasad, \{R. V.\} and Selim, \{F. A.\} and Chung, \{D. D.L.\}",

year = "1986",

month = feb,

doi = "10.1016/0167-577X(86)90052-2",

language = "English",

volume = "4",

pages = "71--76",

journal = "Materials Letters",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Semi-insulating polysilicon

T2 - Growth, processing and structural characterization

AU - Prasad, R. V.

AU - Selim, F. A.

AU - Chung, D. D.L.

PY - 1986/2

Y1 - 1986/2

N2 - X-ray diffraction of semi-insulating polysilicon (SIPOS) on Si, oxidized Si and Al2O3 substrates showed the presence of an anomalous form of crystalline Si and the absence of crystalline SiO2. SIPOS on Si and oxidized Si substrates contained an additional phase which grew with oxygen concentration, whereas SIPOS on Al2O3 contained no such phase.

AB - X-ray diffraction of semi-insulating polysilicon (SIPOS) on Si, oxidized Si and Al2O3 substrates showed the presence of an anomalous form of crystalline Si and the absence of crystalline SiO2. SIPOS on Si and oxidized Si substrates contained an additional phase which grew with oxygen concentration, whereas SIPOS on Al2O3 contained no such phase.

UR - https://www.scopus.com/pages/publications/0007475023

U2 - 10.1016/0167-577X(86)90052-2

DO - 10.1016/0167-577X(86)90052-2

M3 - Article

AN - SCOPUS:0007475023

SN - 0167-577X

VL - 4

SP - 71

EP - 76

JO - Materials Letters

JF - Materials Letters

IS - 2

ER -

Semi-insulating polysilicon: Growth, processing and structural characterization

Abstract

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