Self Raman conversion in YVO4:Nd microchip laser

A. A. Demidovich; L. E. Batay; A. S. Grabtchikov; V. A. Lisinetskii; V. A. Orlovich; A. N. Kuzmin

doi:10.1364/assp.2004.304

Self Raman conversion in YVO₄:Nd microchip laser

A. A. Demidovich
, L. E. Batay
, A. S. Grabtchikov
, V. A. Lisinetskii
, V. A. Orlovich
, A. N. Kuzmin

Institute for Lasers Photonics and Biophotonics

Belarus Academy of Sciences

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The sub-nanosecond passively Q-switched Nd:YVO₄ / Cr ⁴⁺:YAG microchip laser with self Raman conversion has been investigated. The pulse duration obtained at the Raman wavelength (1.18 μm) was as short as 830 ps.

Original language	English
Pages (from-to)	304-307
Number of pages	4
Journal	OSA Trends in Optics and Photonics Series
Volume	94
DOIs	https://doi.org/10.1364/assp.2004.304
State	Published - 2004
Event	Advanced Solid-State Photonics, Proceedings Volume - Santa Fe, NM, United States Duration: Feb 1 2004 → Feb 4 2004

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title = "Self Raman conversion in YVO4:Nd microchip laser",

abstract = "The sub-nanosecond passively Q-switched Nd:YVO4 / Cr 4+:YAG microchip laser with self Raman conversion has been investigated. The pulse duration obtained at the Raman wavelength (1.18 μm) was as short as 830 ps.",

author = "Demidovich, \{A. A.\} and Batay, \{L. E.\} and Grabtchikov, \{A. S.\} and Lisinetskii, \{V. A.\} and Orlovich, \{V. A.\} and Kuzmin, \{A. N.\}",

year = "2004",

doi = "10.1364/assp.2004.304",

language = "English",

volume = "94",

pages = "304--307",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Advanced Solid-State Photonics, Proceedings Volume ; Conference date: 01-02-2004 Through 04-02-2004",

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TY - JOUR

T1 - Self Raman conversion in YVO4:Nd microchip laser

AU - Demidovich, A. A.

AU - Batay, L. E.

AU - Grabtchikov, A. S.

AU - Lisinetskii, V. A.

AU - Orlovich, V. A.

AU - Kuzmin, A. N.

PY - 2004

Y1 - 2004

N2 - The sub-nanosecond passively Q-switched Nd:YVO4 / Cr 4+:YAG microchip laser with self Raman conversion has been investigated. The pulse duration obtained at the Raman wavelength (1.18 μm) was as short as 830 ps.

AB - The sub-nanosecond passively Q-switched Nd:YVO4 / Cr 4+:YAG microchip laser with self Raman conversion has been investigated. The pulse duration obtained at the Raman wavelength (1.18 μm) was as short as 830 ps.

UR - https://www.scopus.com/pages/publications/8744270014

U2 - 10.1364/assp.2004.304

DO - 10.1364/assp.2004.304

M3 - Conference article

AN - SCOPUS:8744270014

SN - 1094-5695

VL - 94

SP - 304

EP - 307

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Advanced Solid-State Photonics, Proceedings Volume

Y2 - 1 February 2004 through 4 February 2004

ER -

Self Raman conversion in YVO₄:Nd microchip laser

Abstract

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