Self-heating in ultra-wide bandgap n-type SrSnO₃thin films

This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current-voltage (I-V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I-V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.