@inproceedings{9eef11c88fa34a9fa394eb8db2948ab5,
title = "Self-excitation of Terahertz Plasmons in Graphene FETs Enabled by Transit-time Negative Dynamic Conductance",
abstract = "The interband Zener-Klein interband tunneling in the field-effect transistors (FETs) with the graphene channels consisting of the reverse-biased p-i-n junctions enables the negative dynamic conductance associated with the electrons and hole propagation delays. This can lead to the self-excitation of plasmons in the gated p- and n-regions. For the submicrometer gate lengths, the frequency of these plasmons is in the terahertz (THz) range. The plasmon self-excitation in this regime can be used for the generation of THz radiation.",
keywords = "graphene FET, negative dynamic conductance, plasmon, self-excitation, terahertz",
author = "Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji and Vladimir Mitin and Shur, \{Michael S.\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2nd International Conference for Advancement in Technology, ICONAT 2023 ; Conference date: 24-01-2023 Through 26-01-2023",
year = "2023",
doi = "10.1109/ICONAT57137.2023.10080743",
language = "English",
series = "2023 International Conference for Advancement in Technology, ICONAT 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Conference for Advancement in Technology, ICONAT 2023",
address = "United States",
}