@inproceedings{781bf0713a8a40109ef5fdda2257c1ad,
title = "Selectively implanted subcollector DHBTs",
abstract = "In0.53Ga0.47As/InP double heterojunction bipolar transistors with implanted subcollectors have been designed and fabricated to eliminate the base access pad capacitance. A blanket Fe implant eliminates the interface charge and a patterned Si implant creates an isolated N++ subcollector. The extrinsic base-collector capacitance Ccb associated with the base interconnect pad (∼25\% of the total Ccb) is thus eliminated These implanted subcollector DHBTs have 363GHz ft and 410GHz fmax. The DC current gain β - 40, BVceo = 5.6V, BVcbo = 6.9V (Ic = 1 mA).",
author = "N. Parthasarathy and Z. Griffith and C. Kadow and U. Singisetti and Rodwell, \{M. J.W.\} and M. Urteaga and K. Shinohara and B. Brar",
year = "2006",
language = "English",
isbn = "0780395581",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "104--107",
booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",
note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",
}