Schottky diode characteristics on high-growth rate LPCVD β-Ga₂O₃films on (010) and (001) Ga₂O₃substrates

High crystalline quality thick β-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (010) and (001) β-Ga2O3 substrates by LPCVD with a fast growth rate varying from 13 to 21 μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density-voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25-250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.