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SCATTERING BY LOW-ENERGY INTERVALLEY PHONONS IN SILICON.

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Abstract

Selection rules are derived for intervalley transitions in n-type Si allowing for the difference between the electron wave vectors before and after scattering. The scattering probabilities are found to be strongly anisotropic and they depend not only on the electron energy but also on the direction of the electron wave vector before and after scattering.

Original languageEnglish
Pages (from-to)205-207
Number of pages3
JournalSoviet physics. Semiconductors
Volume17
Issue number2
StatePublished - 1983

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