Abstract
Selection rules are derived for intervalley transitions in n-type Si allowing for the difference between the electron wave vectors before and after scattering. The scattering probabilities are found to be strongly anisotropic and they depend not only on the electron energy but also on the direction of the electron wave vector before and after scattering.
| Original language | English |
|---|---|
| Pages (from-to) | 205-207 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 17 |
| Issue number | 2 |
| State | Published - 1983 |
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