Scanning gate microscopy of copper phthalocyanine field effect transistors

Nobuyuki Aoki; Kouhei Sudou; Kazuya Okamoto; Jonathan P. Bird; Yuichi Ochiai

doi:10.1063/1.2812575

Scanning gate microscopy of copper phthalocyanine field effect transistors

Nobuyuki Aoki
, Kouhei Sudou
, Kazuya Okamoto
, Jonathan P. Bird
, Yuichi Ochiai

Department of Electrical Engineering

Chiba University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Various techniques are developed to implement ambient scanning gate microscopy (SGM) as a tool for the characterization of organic-thin-film field-effect transistors (OFETs). OFETs comprising copper phthalocyanine have been investigated by this technique and their SGM response has been observed only at the edges of the metal electrodes, thereby providing visualization of the Schottky barrier at the boundary between the organic channel and the metal electrode.

Original language	English
Article number	192113
Journal	Applied Physics Letters
Volume	91
Issue number	19
DOIs	https://doi.org/10.1063/1.2812575
State	Published - 2007

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title = "Scanning gate microscopy of copper phthalocyanine field effect transistors",

abstract = "Various techniques are developed to implement ambient scanning gate microscopy (SGM) as a tool for the characterization of organic-thin-film field-effect transistors (OFETs). OFETs comprising copper phthalocyanine have been investigated by this technique and their SGM response has been observed only at the edges of the metal electrodes, thereby providing visualization of the Schottky barrier at the boundary between the organic channel and the metal electrode.",

author = "Nobuyuki Aoki and Kouhei Sudou and Kazuya Okamoto and Bird, \{Jonathan P.\} and Yuichi Ochiai",

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journal = "Applied Physics Letters",

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AU - Sudou, Kouhei

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AU - Bird, Jonathan P.

AU - Ochiai, Yuichi

PY - 2007

Y1 - 2007

N2 - Various techniques are developed to implement ambient scanning gate microscopy (SGM) as a tool for the characterization of organic-thin-film field-effect transistors (OFETs). OFETs comprising copper phthalocyanine have been investigated by this technique and their SGM response has been observed only at the edges of the metal electrodes, thereby providing visualization of the Schottky barrier at the boundary between the organic channel and the metal electrode.

AB - Various techniques are developed to implement ambient scanning gate microscopy (SGM) as a tool for the characterization of organic-thin-film field-effect transistors (OFETs). OFETs comprising copper phthalocyanine have been investigated by this technique and their SGM response has been observed only at the edges of the metal electrodes, thereby providing visualization of the Schottky barrier at the boundary between the organic channel and the metal electrode.

UR - https://www.scopus.com/pages/publications/36048954443

U2 - 10.1063/1.2812575

DO - 10.1063/1.2812575

M3 - Article

AN - SCOPUS:36048954443

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192113

ER -

Scanning gate microscopy of copper phthalocyanine field effect transistors

Abstract

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