Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Mohammad Abuwasib; Haidong Lu; Tao Li; Pratyush Buragohain; Hyungwoo Lee; Chang Beom Eom; Alexei Gruverman; Uttam Singisetti

doi:10.1063/1.4947020

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Mohammad Abuwasib
, Haidong Lu
, Tao Li
, Pratyush Buragohain
, Hyungwoo Lee
, Chang Beom Eom
, Alexei Gruverman
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo
University of Nebraska-Lincoln
University of Wisconsin-Madison

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO₃/SrRuO₃ ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300 × 300 nm² exhibiting a tunneling electroresistance (TER) effect of the order of 2.7 × 10⁴% have been fabricated and tested. Measured current density of 75 A/cm² for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO₃-based FTJ memory devices in future.

Original language	English
Article number	152904
Journal	Applied Physics Letters
Volume	108
Issue number	15
DOIs	https://doi.org/10.1063/1.4947020
State	Published - Apr 11 2016

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@article{7c644585acc7456d8ddb5e65b8e33cee,

title = "Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions",

abstract = "Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300 × 300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7 × 104\% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO3-based FTJ memory devices in future.",

author = "Mohammad Abuwasib and Haidong Lu and Tao Li and Pratyush Buragohain and Hyungwoo Lee and Eom, \{Chang Beom\} and Alexei Gruverman and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = apr,

day = "11",

doi = "10.1063/1.4947020",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

AU - Abuwasib, Mohammad

AU - Lu, Haidong

AU - Li, Tao

AU - Buragohain, Pratyush

AU - Lee, Hyungwoo

AU - Eom, Chang Beom

AU - Gruverman, Alexei

AU - Singisetti, Uttam

PY - 2016/4/11

Y1 - 2016/4/11

N2 - Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300 × 300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7 × 104% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO3-based FTJ memory devices in future.

AB - Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300 × 300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7 × 104% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO3-based FTJ memory devices in future.

UR - https://www.scopus.com/pages/publications/84964543765

U2 - 10.1063/1.4947020

DO - 10.1063/1.4947020

M3 - Article

AN - SCOPUS:84964543765

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152904

ER -

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

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