@inproceedings{dfe231552ee246db8fce1f66f4ba3510,
title = "Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures",
abstract = "We have performed far infrared cyclotron resonance absorption saturation experiments of both electrons (GaAs/AlGaAs MQW structure) and holes (InGaAs/GaAs <111> strained- layer superlattice) with the Free Electron Laser at UC Santa Barbara, Calif. The Landau level lifetime is found to be laser power dependent at high powers, and is longer for electrons than for holes. Reasons are discussed. Proper analysis of the transmission data is crucial for strongly absorbing multi-layer structures to obtain meaningful results. Limitation of the 3-level model used to determine the lifetimes are also discussed.",
author = "Radha Ranganathan and Jann Kaminski and Li, \{Wei J.\} and Jiping Cheng and McCombe, \{Bruce D.\}",
year = "1992",
doi = "10.1117/12.60466",
language = "English",
isbn = "0819408395",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "238--244",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Spectroscopic Characterization Techniques for Semiconductor Technology IV ; Conference date: 22-03-1992 Through 22-03-1992",
}