Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

H. Y. Liu; I. R. Sellers; R. J. Airey; M. J. Steer; P. A. Houston; D. J. Mowbray; J. Cockburn; M. S. Skolnick; B. Xu; Z. G. Wang

doi:10.1063/1.1481245

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

H. Y. Liu
, I. R. Sellers
, R. J. Airey
, M. J. Steer
, P. A. Houston
, D. J. Mowbray
, J. Cockburn
, M. S. Skolnick
, B. Xu
, Z. G. Wang

Department of Electrical Engineering

University of Sheffield
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560°C. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560°C have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9kA/cm², significantly better than previously reported values for this quantum-dot systems.

Original language	English
Pages (from-to)	3769-3771
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	20
DOIs	https://doi.org/10.1063/1.1481245
State	Published - May 20 2002

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title = "Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate",

abstract = "The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560°C. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560°C have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9kA/cm2, significantly better than previously reported values for this quantum-dot systems.",

author = "Liu, \{H. Y.\} and Sellers, \{I. R.\} and Airey, \{R. J.\} and Steer, \{M. J.\} and Houston, \{P. A.\} and Mowbray, \{D. J.\} and J. Cockburn and Skolnick, \{M. S.\} and B. Xu and Wang, \{Z. G.\}",

year = "2002",

month = may,

day = "20",

doi = "10.1063/1.1481245",

language = "English",

volume = "80",

pages = "3769--3771",

journal = "Applied Physics Letters",

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T1 - Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

AU - Liu, H. Y.

AU - Sellers, I. R.

AU - Airey, R. J.

AU - Steer, M. J.

AU - Houston, P. A.

AU - Mowbray, D. J.

AU - Cockburn, J.

AU - Skolnick, M. S.

AU - Xu, B.

AU - Wang, Z. G.

PY - 2002/5/20

Y1 - 2002/5/20

N2 - The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560°C. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560°C have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9kA/cm2, significantly better than previously reported values for this quantum-dot systems.

AB - The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560°C. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560°C have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9kA/cm2, significantly better than previously reported values for this quantum-dot systems.

UR - https://www.scopus.com/pages/publications/79956056510

U2 - 10.1063/1.1481245

DO - 10.1063/1.1481245

M3 - Article

AN - SCOPUS:79956056510

SN - 0003-6951

VL - 80

SP - 3769

EP - 3771

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

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